1.

国際会議録
国際会議録
1. Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
B. Raghothamachar ; Y. Yang ; R. Dalmau ; B. Moody ; S. Craft
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.91-94,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
Y. Yang ; J. Guo ; O.Y. Goue ; B. Raghothamachar ; M. Dudley
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.105-108,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
H. Wang ; F. Wu ; Y. Yang ; J. Guo ; B. Raghothamachar
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.319-322,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
4.

国際会議録
国際会議録
4. Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
O.Y. Goue ; Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.297-300,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
5.

国際会議録
国際会議録
5. Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
F.Z. Wu ; H.H. Wang ; Y. Yang ; J.Q. Guo ; B. Raghothamachar
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.85-89,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
6.

国際会議録
国際会議録
6. Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
H.H. Wang ; F.Z. Wu ; S.Y. Byrapa ; Y. Yang ; B. Raghothamachar
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.332-337,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
7.

国際会議録
国際会議録
7. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley ; G. Chung ; E. Sanchez ; I. Manning
出版情報: Silicon Carbide and Related Materials 2016.  pp.209-213,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897