1.

国際会議録
国際会議録
1. Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces
K. Ariyoshi ; S. Harada ; J. Senzaki ; T. Kojima ; Y. Kobayashi
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.721-724,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
2.

国際会議録
国際会議録
2. 3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
Y. Kobayashi ; S. Harada ; H. Ishimori ; S. Takasu ; T. Kojima
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.974-977,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. 1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
S. Harada ; Y. Kobayashi ; A. Kinoshita ; N. Ohse ; T. Kojima ; M. Iwaya ; H. Shiomi ; H. Kitai ; S. Kyogoku ; K. Ariyoshi ; Y. Onishi ; H. Kimura
出版情報: Silicon Carbide and Related Materials 2016.  pp.497-500,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897