High-spatial-resolution diffusion length measurements in polycrystalline GaAs

High-spatial-resolution diffusion length measurements in polycrystalline GaAs

著者名:

Fletcher, Robert M. ( School of Electrical Engineering, Cornell University )
Wagner, D. Ken ( School of Electrical Engineering, Cornell University )
Wicks, G.W. ( School of Electrical Engineering, Cornell University )
Ballantyne, J.M. ( School of Electrical Engineering, Cornell University )

掲載資料名:

Grain boundaries in semiconductors : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposia proceedings

シリーズ巻号:

5

発行年:

1982

開始ページ:

217

終了ページ:

222

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444006974 [0444006974]

言語:

英語

請求記号:

M23500/5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019226
シリーズID:	PA00000010
会議名:	Materials Research Society Annual Meeting ; Symposium on grain boundaries in semiconductors
回次:	1981
会議開催地:	Boston, MA, USA
会議開催年:	1981.11.16-1981.11.19

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