1.

国際会議録
国際会議録
1. *GROWTH MECHANISMS DURING THIN FILM CRYSTALLIZATION FROM THE MELT
Pfeiffer, Loren, ; Gelman, A.E. ; Jackson, K.A. ; West, K.W.
出版情報: Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.543-554,  1987.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 74
2.

国際会議録
国際会議録
2. THE ROLE OF IMPLANT TEMPERATURE IN THE FORMATION OF THIN BURIED OXIDE LAYERS
White, Alice E. ; Short, K.T. ; Pfeiffer, L.N. ; West, K.W. ; Batstone, J.L.
出版情報: Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.585-590,  1987.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 74
3.

国際会議録
国際会議録
3. MOLECULAR BEAM EPITAXY OF LOW TEMPERATURE GROWN GaAs PHOTOCONDUCTORS
Dykaar, D.R. ; Eaglesham, D.J. ; Keil, U.D. ; Greene, B.I. ; Saeta, P.N. ; Pfeiffer, L.N. ; Kopf, R.F. ; Darack, S.B. ; West, K.W.
出版情報: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.245-250,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 241
4.

国際会議録
国際会議録
4. REDUCED SUBBOUNDARY MISALIGNMENT IN SOl FILMS SCANNED AT LOW VELOCITIES
Pfeiffer, L. ; West, K.W. ; Joy, D.C. ; Gibson, J.M. ; Gelman, A.E.
出版情報: Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A..  pp.29-38,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 53
5.

国際会議録
国際会議録
5. CAPPING TECHNIQUES FOR ZONE-MELTING-RECRYSTALLIZED Si-ON-INSULATOR FILMS
Chen, C.K. ; Pfeiffer, L. ; West, K.W. ; Geis, M.W. ; Darack, S. ; Achaibar, G. ; Mountain, R.W. ; Tsaur, B-Y.
出版情報: Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A..  pp.53-58,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 53
6.

国際会議録
国際会議録
6. IMPROVING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF EPITAXIAL CaF2 ON Si BY RAPID THERMAL ANNEALING
Phillips, J.M. ; Manger, M.L. ; Pfeiffer, L. ; Joy, D.C. ; Smith III, T.P. ; Augustyniak, W.M. ; West, K.W.
出版情報: Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A..  pp.155-162,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 53
7.

国際会議録
国際会議録
7. IMPROVED SOI FILMS BY HIGH DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING
Celler, G.K. ; Hemment, P.L.F. ; West, K.W. ; Gibson, J.M.
出版情報: Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A..  pp.227-232,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 53
8.

国際会議録
国際会議録
8. * THERMAL STRESS DURING ZONE-MELTING-RECRYSTALLIZATION OF SILICON ON INSULATOR FILMS: THE ORIGIN OF SUBBOUNDARIES AND IN-PLANE ORIENTATION OF SOI
Gibson, J.M. ; Pfeiffer, L.N. ; West, K.W. ; Joy, D.C.
出版情報: Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A..  pp.289-300,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 53
9.

国際会議録
国際会議録
9. Silicon formation at Fe-Si interfaces studied by Mossbauer spectroscopy and Rutherford backscattering
Cohen, R.L. ; Feldman, L.C. ; West, K.W. ; Silverman, P.J.
出版情報: Nuclear and electron resonance spectroscopies applied to materials science : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.357-358,  1981.  New York, N.Y..  North Holland
シリーズ名: Materials Research Society symposia proceedings
シリーズ巻号: 3