1.

国際会議録
国際会議録
1. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
2.

国際会議録
国際会議録
2. Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Bickermann, M. ; Weingartner, R. ; Herro, Z. ; Hofmann, D. ; Kunecke, U. ; Wellmann, P.J. ; Winnacker, A.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.337-340,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
3.

国際会議録
国際会議録
3. Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Wellmann, P.J. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T.L. ; Winnacker, A.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.11-14,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
4.

国際会議録
国際会議録
4. Stability Criteria for 4H-SiC Bulk Growth
Straubinger, T.L. ; Bickermann, M. ; Hofmann, D. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.25-28,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
5.

国際会議録
国際会議録
5. Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.49-52,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
6.

国際会議録
国際会議録
6. Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
Selder, M. ; Kadinski, L. ; Durst, F. ; Straubinger, T.L. ; Wellmann, P.J. ; Hofmann, D.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.65-68,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356