1.

国際会議録
国際会議録
1. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances
Pantelides, S.T. ; Wang, S. ; Franceschetti, A. ; Buczko, R. ; Di Ventra, M. ; Rashkeev, S.N. ; Tsetseris, L. ; Evans, M.H. ; Batyrev, I.G. ; Feldman, L.C. ; Dhar, S. ; McDonald, K. ; Weller, R.A. ; Schrimpf, R.D. ; Fleetwood, D.M.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.935-948,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, L.C. ; Chung, G. ; Chisholm, M.
出版情報: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.371-378,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 786
3.

国際会議録
国際会議録
3. Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System
Pantelides, S.T. ; Buczko, R. ; Ventra, M. Di ; Wang, S. ; Kim, S.-G. ; Pennycook, S.J. ; Duscher, G. ; Feldman, L.C. ; McDonald, K. ; Chanana, R.K. ; Weller, R.A. ; Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; Isaacs-Smith, T.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640