1.

国際会議録
国際会議録
1. Extended Defects in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.199-204,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
2.

国際会議録
国際会議録
2. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Stahlbush, R. ; Fedison, J.B. ; Arthur, S.D. ; Rowland, L.B. ; Kretchmer, J.W. ; Wang, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.427-430,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.537-542,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
4.

国際会議録
国際会議録
4. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Stahlbush, R.E. ; Fedison, J.B. ; Arthur, S.D. ; Rowland, L.B. ; Kretchmer, J.W. ; Wang, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.427-430,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393