1.

国際会議録
国際会議録
1. Electrical Activation of B Implant in 6H-SiC
Valcheva,E. ; Paskova,T. ; Ivanov,I.S. ; Yakimova,R. ; Wahab,Q. ; Savage,S. ; Nordell,N. ; Hamis,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.705-708,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
Persson,P.O.A. ; Wahab,Q. ; Hultman,L. ; Nordell,N. ; Schoner,A. ; Rottner,K. ; Olsson,E. ; Linnarsson,M.K.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.413-416,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Ionization Rates and Critical Fields in 4H SiC Junction Devices
Konstantinov,A.O. ; Wahab,Q. ; Nordell,N. ; Lindefelt,U.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.513-516,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268