1.

国際会議録
国際会議録
1. Photoluminescence Study of C-H and C-D Centers in 4H SiC
Bai, S. ; Yan, F. ; Devaty, R.P. ; Choyke, W.J. ; Grotzschel, R. ; Wagner, G. ; MacMillan, M.F.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.589-592,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
2.

国際会議録
国際会議録
2. Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
Bai, S. ; Devaty, R.P. ; Choyke, W.J. ; Kaiser, U. ; Wagner, G. ; MacMillan, M.F.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.573-576,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
3.

国際会議録
国際会議録
3. Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
Bai, S. ; Wagner, G. ; Shishkin, E. ; Choyke, W.J. ; Devaty, R.P. ; Zhang, M. ; Pirouz, P. ; Kimoto, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.589-592,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
Bai, S. ; Wagner, G. ; Shishkin, E. ; Choyke, W.J. ; Devaty, R.P. ; Zhang, M. ; Pirouz, P. ; Kimoto, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.589-592,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393