ROLE OF OXYGEN PRECIPITATION PROCESSES IN DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
- 著者名:
- 掲載資料名:
- Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 279
- 発行年:
- 1993
- 開始ページ:
- 153
- 終了ページ:
- 158
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991743 [1558991743]
- 言語:
- 英語
- 請求記号:
- M23500/279
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Materials Research Society |
9
国際会議録
TWINNING STRUCTURE OF (113) DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
11
国際会議録
FORMATION OF SILICON ON INSULATOR (SOI) WITH SEPARATION BY PLASMA IMPLANTATION OF OXYGEN (SPIMOX)
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |