A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture
- 著者名:
Mirabedini, M. R. Li, V. Z-Q. Acker, A. R. Kuehn, R. T. Venables, D. Ozturk, M. C. Wortman, J. J. - 掲載資料名:
- Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 525
- 発行年:
- 1998
- 開始ページ:
- 207
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994317 [1558994319]
- 言語:
- 英語
- 請求記号:
- M23500/525
- 資料種別:
- 国際会議録
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