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A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture

著者名:
Mirabedini, M. R.
Li, V. Z-Q.
Acker, A. R.
Kuehn, R. T.
Venables, D.
Ozturk, M. C.
Wortman, J. J.
さらに 2 件
掲載資料名:
Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
525
発行年:
1998
開始ページ:
207
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994317 [1558994319]
言語:
英語
請求記号:
M23500/525
資料種別:
国際会議録

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