1.

国際会議録
国際会議録
1. Remote Plasma-Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)x-(SiO2)1-x (x ｡？0.5), Thin Films for Advanced High-K Gate Dielectrics
Wolfe, D. ; Flock, K. ; Therrien, R. ; Johnson, R. ; Rayner, B. ; Gunther, L. ; Brown, N. ; Claflin, B. ; Lucovsky, G.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.343-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567
2.

国際会議録
国際会議録
2. Electrical Performance of MOS Devices with Plasma Deposited ZrO2-SiO2 Pseudo-Binary Silicate Alloys
Therrien, R. ; Rayner, B. ; Lucovsky, C.
出版情報: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.495-504,  2000.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-2