1.

国際会議録
国際会議録
1. Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
K. Yoshihara ; M. Kato ; M. Ichimura ; T. Hatayama ; T. Ohshima
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.373-376,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
V. Matsushita ; M. Kato ; M. Ichimura ; T. Hatayama ; T. Ohshima
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.207-210,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
3.

国際会議録
国際会議録
3. Identification of Structures of the Deep Levels in 4H-SiC
H. Nakane ; M. Kato ; M. Ichimura ; T. Ohshima
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.277-280,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780