Blank Cover Image

Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

著者名:
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
開始ページ:
457
終了ページ:
460
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Yoshikawa, M., Satoh, M., Ohshima, T., Itoh, H.

Trans Tech Publications
7 国際会議録 Impurity Conduction in Silicon Carbide

M. Krieger, K. Semmelroth, H.B. Weber, G. Pensl, M. Rambach, L. Frey

Trans Tech Publications
2 国際会議録 Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Yoshikawa, M., Satoh, M., Ohshima, T., Itoh, H.

Trans Tech Publications
8 国際会議録 Fast digitization and discrimination of prompt neutron and photon signals using a novel silicon carbide detector

B. W. Blackburn, J. T. Johnson, S. M. Watson, D. L. Chichester, J. L. Jones, F. H. Ruddy, J. G. Seidel, R. W. Flammang

SPIE - The International Society of Optical Engineering
3 国際会議録 Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions

Ohshima, T., Itoh, H., Yoshikawa, M.

Trans Tech Publications
9 国際会議録 Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film

Rajanna, K., Tanaka, S., Itoh, T., Esashi, M.

Trans Tech Publications
4 国際会議録 Scandium and Gallium Implantation Doping of Silicon Carbide

Henkel, T., Tanaka, Y., Kobayashi, N., Koutzarov, I., Okumura, H., Yoshida, S., Ohshima, T.

MRS - Materials Research Society
10 国際会議録 Sequential Plasma Activated Process for Silicon Direct Bonding

M.R. Howlader, H. Itoh, T. Suga, M. Kim

Electrochemical Society
5 国際会議録 Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

Kawasaki, H., Suda, Y., Ohshima, T., Ueda, T., Nakashima, S.

Materials Research Society
11 国際会議録 Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Lee, K. K., Ohshima, T., Itoh, H.

Trans Tech Publications
6 国際会議録 ANALYSIS OF THE AMORPHOUS SILICON CARBIDE/CRYSTALLINE SILICON INTERFACE

Rahman, M. M.., Harjono, T., Lui, K. H., Pagaduan, F. E., Inokawa, H., Yang, C. Y., Sigiarto, D.

Materials Research Society
12 国際会議録 Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method

Sugishita, S., Shoji, A., Mukai, Y., Nishiguchi, T., Michikami, K., Issiki, T., Ohshima, S., Nishino, S.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12