1.

国際会議録
国際会議録
1. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; H. Uehigashi
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.119-124,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
T. Miyazawa ; K. Nakayama ; A. Tanaka ; K. Asano ; S.Y. Ji
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.851-854,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. An Electrochemical Sensor Array for In-situ Measurements of Oxide Film Electric Resistance in High Temperature Water
S. Uchida ; T. Satoh ; T. Miyazawa ; Y. Satoh ; N. Kakinuma
出版情報: Sensors, Actuators, and Microsystems (General).  pp.39-50,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 2(25)
4.

国際会議録
国際会議録
4. Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
N. Thierry-Jebali ; C. Kawahara ; T. Miyazawa ; H. Tsuchida ; T. Kimoto
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.323-326,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
5.

国際会議録
国際会議録
5. Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
X. Zhang ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.313-318,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
T. Miyazawa ; M. Ito ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.197-200,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
7.

国際会議録
国際会議録
7. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
K. Nakayama ; R. Ishii ; K. Asano ; T. Miyazawa ; M. Ito
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.535-538,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
8.

国際会議録
国際会議録
8. SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
K. Nakayama ; R. Ishii ; K. Asano ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.559-562,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
9.

国際会議録
国際会議録
9. Growth of 4H-SiC Epilayers and Z1/2 Center Elimination
T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.81-86,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
10.

国際会議録
国際会議録
10. Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
K. Nakayama ; A. Tanaka ; K. Asano ; T. Miyazawa ; M. Ito
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.989-992,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
11.

国際会議録
国際会議録
11. Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
L. Storasta ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
12.

国際会議録
国際会議録
12. Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; N. Hoshino
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.85-90,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
13.

国際会議録
国際会議録
13. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
T. Miyazawa ; S.Y. Ji ; K. Kojima ; Y. Ishida ; K. Nakayama
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.135-138,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
14.

国際会議録
国際会議録
14. Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano ; T. Miyazawa
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.77-82,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
15.

国際会議録
国際会議録
15. Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
K. Nakayama ; A. Tanaka ; K. Asano ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.903-906,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
16.

国際会議録
国際会議録
16. Analysis of Performance Characteristics of Intermediate-Temperature Disk Type SOEC Using Pure Hydrogen
T. Tanaka ; T. Kanno ; T. Nakamura ; Y. Inui ; N. Chitose ; T. Miyazawa ; T. Akbay
出版情報: Solid oxide fuel cells 10 (SOFC-X).  pp.1967-1976,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 7(1)
17.

国際会議録
国際会議録
17. Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
T. Miyazawa ; T. Tawara ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2016.  pp.51-54,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
18.

国際会議録
国際会議録
18. Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
T. Tawara ; T. Miyazawa ; M. Ryo ; M. Miyazato ; T. Fujimoto ; K. Takenaka ; S. Matsunaga ; M. Miyajima ; A. Otsuki ; Y. Yonezawa ; T. Kato ; H. Okumura ; T. Kimoto ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2016.  pp.419-422,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
19.

国際会議録
国際会議録
19. V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
T. Miyazawa ; T. Tawara ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2016.  pp.67-70,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
20.

国際会議録
国際会議録
20. Hard x-ray characterization of the NeXT hard x-ray telescopes at SPring-8
T. Miyazawa ; Y. Ogasaka ; T. Iwahara ; Y. Kanou ; N. Sasaki
出版情報: Space telescopes and instrumentation 2008 : ultraviolet to gamma ray : 23-28 June 2008, Marseille, France.  2  pp.70112P-1-70112P-8,  2008.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 7011
21.

国際会議録
国際会議録
21. Development of heat-assisted high speed MOSLM in broadband wavelength
J. Heo ; T. Miyazawa ; J. Y. Kim ; M. Inoue
出版情報: Photonic fiber and crystal devices : advances in materials and innovations in device applications II : 12-14 August 2008, San Diego, California, USA.  pp.70561S-1-70561S-8,  2008.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 7056
22.

国際会議録
国際会議録
22. Thin-foil multilayer-supermirror hard x-ray telescopes for InFOCµS/SUMIT balloon experiments and NeXT satellite program
Y. Ogasaka ; K. Tamura ; T. Miyazawa ; Y. Fukaya ; T. Iwahara
出版情報: Optics for EUV, x-ray, and gamma-ray astronomy III : 29-30 August 2007, San Diego, California, USA.  pp.668803-1-668803-8,  2007.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6688
23.

国際会議録
国際会議録
23. Characterization of Pt/C multilayer at 200 keV soft gamma-ray
Y. Ogasaka ; T. Iwahara ; T. Miyazawa ; Y. Fukaya ; N. Sasaki
出版情報: Optics for EUV, x-ray, and gamma-ray astronomy III : 29-30 August 2007, San Diego, California, USA.  pp.66880S-1-66880S-8,  2007.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6688
24.

国際会議録
国際会議録
24. The NeXT x-ray telescope system: status update
Y. Ogasaka ; H. Kunieda ; T. Miyazawa ; P. Serlemitsos ; Y. Soong
出版情報: Space telescopes and instrumentation 2008 : ultraviolet to gamma ray : 23-28 June 2008, Marseille, France.  1  pp.70110P-1-70110P-8,  2008.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 7011