1.

国際会議録
国際会議録
1. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; H. Uehigashi
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.119-124,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
T. Miyazawa ; K. Nakayama ; A. Tanaka ; K. Asano ; S.Y. Ji
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.851-854,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. An Electrochemical Sensor Array for In-situ Measurements of Oxide Film Electric Resistance in High Temperature Water
S. Uchida ; T. Satoh ; T. Miyazawa ; Y. Satoh ; N. Kakinuma
出版情報: Sensors, Actuators, and Microsystems (General).  pp.39-50,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 2(25)
4.

国際会議録
国際会議録
4. Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
N. Thierry-Jebali ; C. Kawahara ; T. Miyazawa ; H. Tsuchida ; T. Kimoto
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.323-326,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
5.

国際会議録
国際会議録
5. Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
X. Zhang ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.313-318,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
T. Miyazawa ; M. Ito ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.197-200,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
7.

国際会議録
国際会議録
7. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
K. Nakayama ; R. Ishii ; K. Asano ; T. Miyazawa ; M. Ito
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.535-538,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
8.

国際会議録
国際会議録
8. SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
K. Nakayama ; R. Ishii ; K. Asano ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.559-562,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
9.

国際会議録
国際会議録
9. Growth of 4H-SiC Epilayers and Z1/2 Center Elimination
T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.81-86,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
10.

国際会議録
国際会議録
10. Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
K. Nakayama ; A. Tanaka ; K. Asano ; T. Miyazawa ; M. Ito
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.989-992,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720