1.

国際会議録
国際会議録
1. Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes
S. Onoda ; T. Ohshima ; T. Hirao ; S. Hishiki ; N. Iwamoto
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1039-1042,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions
T. Ohshima ; T. Satoh ; M. Oikawa ; S. Onoda ; S. Hishiki ; T. Hirao ; T. Kamiya ; T. Yokoyama ; A. Sakamoto ; R. Tanaka ; I. Nakano ; G. Wagner ; H. Itoh
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.913-916,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557