1.

国際会議録
国際会議録
1. Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements
T. Hatakeyama ; K. Takao ; Y. Yonezawa ; H. Yano
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.477-480,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
T. Suzuki ; H. Yamaguchi ; T. Hatakeyama ; H. Matsuhata ; J. Senzaki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.789-792,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
T. Hatakeyama ; K. Ichinoseki ; H. Yamaguchi ; N. Sugiyama ; H. Matsuhata
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.359-362,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
T. Suzuki ; J. Senzaki ; T. Hatakeyama ; K. Fukuda ; T. Shinohe
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.791-794,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
5.

国際会議録
国際会議録
5. Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
T. Hatakeyama ; T. Suzuki ; J. Senzaki ; K. Fukuda ; H. Matsuhata
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.783-786,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
6.

国際会議録
国際会議録
6. Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
C. Ota ; J. Nishio ; K. Takao ; T. Hatakeyama ; T. Shinohe
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.655-658,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation
T. Suzuki ; J. Senzaki ; T. Hatakeyama ; K. Fukuda ; T. Shinohe
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.557-560,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
8.

国際会議録
国際会議録
8. Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
9.

国際会議録
国際会議録
9. Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
T. Hatakeyama ; H. Kono ; T. Suzuki ; J. Senzaki ; K. Fukuda
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.553-556,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
10.

国際会議録
国際会議録
10. An Investigation of Material Limit Characteristics of SiC IGBTs
T. Hatakeyama ; K. Fukuda ; H. Okumura
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1143-1146,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
11.

国際会議録
国際会議録
11. Microscopic Examination of SiO2/4H-SiC Interfaces
T. Hatakeyama ; H. Matsuhata ; T. Suzuki ; T. Shinohe ; H. Okumura
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.330-333,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
12.

国際会議録
国際会議録
12. Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
T. Hatakeyama ; K. Ichinoseki ; N. Higuchi ; K. Fukuda ; K. Arai
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.553-556,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
13.

国際会議録
国際会議録
13. Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.611-614,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
14.

国際会議録
国際会議録
14. Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
C. Ota ; J. Nishio ; T. Hatakeyama ; T. Shinohe ; K. Kojima ; S.I. Nishizawa ; H. Ohashi
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.881-884,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
15.

国際会議録
国際会議録
15. Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.323-326,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
16.

国際会議録
国際会議録
16. Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
T. Hatakeyama ; T. Suzuki ; K. Ichinoseki ; H. Matsuhata ; K. Fukuda
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.799-804,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
17.

国際会議録
国際会議録
17. Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC
T. Hatakeyama ; T. Shimizu ; T. Suzuki ; Y. Nakabayashi ; H. Okumura
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.477-480,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
18.

国際会議録
国際会議録
18. Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge
T. Hatakeyama ; M. Sometani ; K. Fukuda ; H. Okumura ; T. Kimoto
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.424-427,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
19.

国際会議録
国際会議録
19. Magnetic assist and magnetic pulse compression for copper vapor laser
H. Deguchi ; A. Iwata ; T. Hatakeyama ; E. Fujiwara ; Y. Izawa
出版情報: UV and visible lasers and laser crystal growth : 7-9 February 1995, San Jose, California.  pp.183-194,  1995.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2380
20.

テクニカルペーパー
テクニカルペーパー
20. Temperature and Time Dependence of Device Interactions in Submicron Si CMOS
T. Hatakeyama ; K. Fushinobu ; K. Okazaki
出版情報: AIAA meeting papers on disc.  2006.  Reston, Va.  American Institute of Aeronautics and Astronautics
シリーズ名: AIAA Paper : AIAA/ASME Joint Thermophysics and Heat Transfer Conference
シリーズ巻号: 2006