1.

国際会議録
国際会議録
1. EPITAXIAL PHASE FORMATION OF FeSi2 IN AN Fe-IMPLANTED Si BY ION IRRADIATION AND RAPID THERMAL ANNEALING
Lin, X.W. ; Behar, M. ; Desimoni, J. ; Bernas, H. ; Swider, W. ; Liliental-Weber, Z. ; Washburn, J.
出版情報: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.535-540,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 279
2.

国際会議録
国際会議録
2. TEM AND HREM STUDIES OF AS-GROWN LOW-TEMPERATURE MOLECULAR BEAM EPITAXIAL In0.52Al0.48As/InP HETEROLAYERS
Claverie, A. ; Liliental-Weber, Z. ; Werner, P. ; Swider, W. ; Bhattacharya, P.K. ; Gupta, S. ; Mourou, G.
出版情報: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.289-294,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 241
3.

国際会議録
国際会議録
3. ELECTRICAL AND STRUCTURAL PROPERTIES OF Ti CONTACTS ON AN ATOMICALLY CLEAN N-TYPE GaAs SURFACE
Lin, X.W. ; Liliental-Weber, Z. ; Swider, W. ; McCants, T. ; Newman, N. ; Spicer, W.E. ; Washburn, J. ; Weber, E.R.
出版情報: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.665-670,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 281
4.

国際会議録
国際会議録
4. Polarity of GaN
Liliental-Weber, Z. ; Benamara, M. ; Richter, O. ; Swider, W. ; Washburn, J. ; Grzegory, I. ; Porowski, S. ; Yang, J. W. ; Nakamura, S.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.363-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
5.

国際会議録
国際会議録
5. DEFFECTS IN GaAs BULK CRYSTALS AND MULTI-LAYERS CAUSED BY In DIFFUSION
Werner, P. ; Liliental-Weber, Z. ; Swider, W. ; Sohn, H. ; Yau, WaiFan ; Baranowski, J. ; Weber, E. R.
出版情報: Materials reliability in microelectronics III : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.487-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 309
6.

国際会議録
国際会議録
6. Nanotubes in GaN
Liliental-Weber, Z. ; Chen, Y. ; Ruvimov, S. ; Swider, W. ; Washburn, J.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.417-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
7.

国際会議録
国際会議録
7. Effect of the doping and the Al content on the microstructure and morphology of thin Alx Ga1-xN layers grown by MOCVD
Mazur, J. H. ; Benamara, M. ; Liliental-Weber, Z. ; Swider, W. ; Washburn, J. ; Eiting, C. J. ; Dupuis, R. D.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.77.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
8.

国際会議録
国際会議録
8. TEM Study of Defects in Laterally Overgrown GaN Layers
Liliental-Weber, Z. ; Benamara, M. ; Swider, W. ; Washburn, J. ; Park, J. ; Grudowski, P. A. ; Eiting, C. J. ; Dupuis, R. D.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.6.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
9.

国際会議録
国際会議録
9. Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells
Liliental-Weber, Z. ; Ruvimov, S. ; Swider, W. ; Kim, Y. ; Washburn, J. ; Nakamura, S. ; Kern, R. S. ; Chen, Y. ; Yang, J. W.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.375-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482
10.

国際会議録
国際会議録
10. Relation Between Structure and Carrier Lifetime in As-Implanted GaAs
Liliental-Weber, Z. ; Swider, W. ; Kagiichi, H. ; Claverie, A. ; Wang, H. H. ; Whitaker, J. F.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.677-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378
11.

国際会議録
国際会議録
11. Structural Defects in Heteroepitaxial and Homoepitaxial GaN
Lillental-Weber, Zuzanna ; Ruvimov, S. ; Kisielowski, Ch. ; Chen, Y. ; Swider, W. ; Washburn, J. ; Newman, N. ; Gassmann, A. ; Liu, X. ; Schloss, L. ; Weber, E. R. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Suski, T. ; Pakula, K. ; Baranowski, J. ; Porowski, S. ; Amano, H. ; Akasaki, I.
出版情報: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.351-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 395
12.

国際会議録
国際会議録
12. Effect of Si Doping on the Structure of GaN
Liliental-Weber, Zuzanna ; Ruvimov, S. ; Suski, T. ; Ager, J. W., III ; Swider, W. ; Chen, Y. ; Kisielowski, Ch. ; Washburn, J. ; Akasaki, I. ; Amano, H. ; Kuo, C. ; Imler, W.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.487-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
13.

国際会議録
国際会議録
13. CORRELATION BETWEEN THE MICROSTRUCTURES AND THE ELECTRICAL PROPERTIES OF Ni/Au/Te/Au CONTACTS ON n-GaAs
Lin, X. W. ; Watte, J. ; Wuyts, K. ; Swider, W. ; Silverans, R. E. ; Liliental-Weber, Z. ; Washburn, J.
出版情報: Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A..  pp.295-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 337
14.

国際会議録
国際会議録
14. TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer
Benamara, Mourad ; Liliental-Weber, Z. ; Kellermann, S. ; Swider, W. ; Washburn, J. ; Mazur, J.H. ; Bourret-Courchesne, E.D.
出版情報: Wide-bandgap electronic devices.  pp.T6.14-,  2001.  Warrendale, PA..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 622
15.

国際会議録
国際会議録
15. Atomic scale analysis of InGaN multi-quantum wells
Benamara, M. ; Liliental-Weber, Z. ; Swider, W. ; Washburn, J. ; Dupuis, R. D. ; Grudowski, P. A. ; Eiting, C. J. ; Yang, J. W. ; Khan, M. A.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.357-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
16.

国際会議録
国際会議録
16. The role of the multi buffer layer technique on the structural quality of GaN
Benamara, M. ; Liliental-Weber, Z. ; Mazur, J. H. ; Swider, W. ; Washburn, J. ; Iwaya, M. ; Akasaki, I. ; Amano, H.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W5.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
17.

国際会議録
国際会議録
17. Mg, segregation, difficulties of P-doping in GaN
Liliental-Weber, Z. ; Benamara, M. ; Swider, W. ; Washburn, J. ; Grzegory, I. ; Porowski, S. ; Dupuis, R. D. ; Eiting, C. J.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W9.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595