Studies on Cerium Dioxide as a Gate Oxide Material for MOS Transistors

Studies on Cerium Dioxide as a Gate Oxide Material for MOS Transistors

著者名:

掲載資料名:

Dielectric material integration for microelectronics

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-3

発行年:

1998

開始ページ:

206

終了ページ:

215

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771979 [1566771978]

言語:

英語

請求記号:

E23400/98-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013906
シリーズID:	PA00000028
会議名:	Meeting of the Electrochemical Society
回次:	193rd
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.03-1998.05.08

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