1.

国際会議録
国際会議録
1. Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
Ohtsuka, K. ; Sugimoto, H. ; Kinouchi, S. ; Tarui, Y. ; Imaizumi, M. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1165-1168,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
Sugimoto, H. ; Kinouchi, S. ; Tarui, Y. ; Imaizumi, M. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.731-734,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
3.

国際会議録
国際会議録
3. Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1203-1206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Reactive Ion Etching in CF4/O2 Gas Mixtures for Fabricating SiC Devices
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Tanimura, J. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1057-1060,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
5.

国際会議録
国際会議録
5. Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
Ohtsuka, K. ; Tarui, Y. ; Imaizumi, M. ; Sugimoto, H. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.765-768,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
6.

国際会議録
国際会議録
6. Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
Ohtsuka, K. ; Sugimoto, H. ; Kinouchi, S.I. ; Tarui, Y. ; Imaizumi, M. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1165-1168,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1203-1206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393