1.

国際会議録
国際会議録
1. ENERGY AND DEPTH DISTRIBUTIONS OF INTERFACE STATES AND BULK TRAPS AND THEIR ELECTRONIC EFFECTS IN GaInAs/GaAs HETEROJUNCTIONS
Huang, Z. C. ; Wie, C. R. ; Johnstone, D. ; Stutz, C. E.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.633-642,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
2.

国際会議録
国際会議録
2. CHARACTERIZATION OF MBE GaAs LAYERS GROWN AT 200°C-300°C
Wie, C. R. ; Xie, K. ; Berdin, T. T. ; Fronko, J. G. ; Look, D. C. ; Evans, K. R. ; Stutz, C. E.
出版情報: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.383-388,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 198