Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

253

終了ページ:

256

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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1 国際会議録 Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soderholm, R., Lendenmann, H. Trans Tech Publications	7 国際会議録 Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers J. Hassan, A. Henry, J.P. Bergman Trans Tech Publications
2 国際会議録 Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soederholm, R., Lendenmann, H. Trans Tech Publications	8 国際会議録 Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro Trans Tech Publications
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