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Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiC

著者名:
Smith, A. R.
Ramachandran, V.
Feenstra, R. M.
Greve, D. W.
Neugebauer, J.
Northrup, J. E.
Shin, M.
Skowronski, M.
さらに 3 件
掲載資料名:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
482
発行年:
1998
開始ページ:
363
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
言語:
英語
請求記号:
M23500/482
資料種別:
国際会議録

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