1.

国際会議録
国際会議録
1. New Aspects in n-type Doping of SiC with Phosphorus
Rauls, E. ; Gerstmann, U. ; Greulich-Weber, S. ; Semmelroth, K. ; Pensl, G. ; Haller, E.E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.609-612,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
Semmelroth, K. ; Schmid, F. ; Karg, D. ; Pensl, G. ; Maier, M. ; Greulich-Weber, S. ; Spaeth, J.-M.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.63-66,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436