1.

国際会議録
国際会議録
1. Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
Laube, M. ; Schmid, F. ; Pensl, G. ; Wagner, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.791-794,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
Schmid, F. ; Laube, M. ; Pensl, G. ; Wagner, G. ; Maier, M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.787-790,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC
Schmid, F. ; Frank, T. ; Pensl, G.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.641-644,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
4.

国際会議録
国際会議録
4. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
Puesche, R. ; Hundhausen, M. ; Ley, L. ; Semmelroth, K. ; Schmid, F. ; Pensl, G. ; Nagasawa, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.617-620,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
6.

国際会議録
国際会議録
6. Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
Yan, F. ; Devaty, R. P. ; Choyke, W. J. ; Gali, A. ; Schmid, F. ; Pensl, G. ; Wagner, G.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.493-496,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
7.

国際会議録
国際会議録
7. Electrical and Optical Characterization of SiC
Pensl, G. ; Schmid, F. ; Ciobanu, F. ; Laube, M. ; Reshanov, S.A. ; Schulze, N. ; Semmelroth, K. ; Nagasawa, H. ; Schoner, A. ; Wagner, G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.365-370,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
8.

国際会議録
国際会議録
8. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
9.

国際会議録
国際会議録
9. Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
Negoro, Y. ; Katsumoto, K. ; Kimoto, T. ; Matsunami, H. ; Schmid, F. ; Pensl, G.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.913-916,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
10.

国際会議録
国際会議録
10. Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
Schmid, F. ; Laube, M. ; Pensl, G. ; Wagner, G. ; Maier, M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.787-790,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393