1.

国際会議録
国際会議録
1. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.407-410,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.403-406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Observation of 2in SiC Wafer by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.411-414,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
Sasaki, M. ; Shiomi, H. ; Nishino, S.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.267-270,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
5.

国際会議録
国際会議録
5. Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates
Nishino, S. ; Nishiguchi, T. ; Masuda, Y. ; Sasaki, M. ; Ohshima, S.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
6.

国際会議録
国際会議録
6. Crystal Growth of 15R-SiC Boules by Sublimation Method
Nishiguchi, T. ; Okada, S. ; Sasaki, M. ; Harima, H. ; Nishino, S.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.115-118,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
7.

国際会議録
国際会議録
7. Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Okada, S. ; Nishiguchi, T. ; Shimizu, T. ; Sasaki, M. ; Oshima, S. ; Nishino, S.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.51-54,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
8.

国際会議録
国際会議録
8. Polytype and Defect Control of Two Inch Diameter Bulk SiC
Sasaki, M. ; Shiomi, H. ; Harima, H. ; Nishino, S.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.485-488,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
9.

国際会議録
国際会議録
9. Observation of Planar Defects in 2-inch SiC Wafer
Tanaka, H. ; Nishiguchi, T. ; Sasaki, M. ; Nishino, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.79-82,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
10.

国際会議録
国際会議録
10. Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
Tanaka, H. ; Nishiguchi, T. ; Sasaki, M. ; Ohshima, S. ; Nishino, S.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.71-74,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436