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DETECTION OF NON STOICHIOMETRIC VACANCY DEFECTS IN CdTe,HgTe AND Hg1-x CdxTe BY POSITRON ANNIHILATION.

著者名:
GEFFROY,B.
CORBEI,C.
STUCKY,M.
TRIBOULET,R.
HAU-TOJARVI,P.
PLAZAOLA,F.
SAARINEN,K.
RAJAINMAKI,H.
AALTONEN,J.
MOSER,P.
SENGUPTA,A.
PAUTRAT,J.L.
さらに 7 件
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part3
開始ページ:
1241
終了ページ:
1246
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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