1.

国際会議録
国際会議録
1. Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing
S.I. Maximenko ; J.A. Freitas Jr. ; N.Y. Garces ; E.R. Glaser ; M.A. Fanton
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.429-432,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
Y. Chen ; R. Balaji ; M. Dudley ; M. Murthy ; S.I. Maximenko
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.549-552,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
3.

国際会議録
国際会議録
3. CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
S.I. Maximenko ; J.A. Freitas Jr. ; Y.N. Picard ; P.B. Klein ; R.L. Myers-Ward
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.211-214,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648