1.

国際会議録
国際会議録
1. Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
Reshanov, S.A. ; Klettke, O. ; Pensl, G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.379-382,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
2.

国際会議録
国際会議録
2. Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Reshanov, S.A. ; Klettke, O. ; Pensl, G. ; Choyke, W.J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.459-462,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436