1.

国際会議録
国際会議録
1. High frequency performances of a SOI technology for low power, low voltage applications
Ferlet-Cavrois, V. ; Marcandella, C. ; Pelloie, J.L. ; Raynaud, C. ; Faynot, O.
出版情報: Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.373-377,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-23
2.

国際会議録
国際会議録
2. Channel Width, Length and Thickness Effects in LOCOS-Isolated SOT MOSFETs
Pretet, I. ; Cristoloveanu, S. ; Alliben, F. ; Zaslavsky, A. ; Raynaud, C.
出版情報: Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium.  pp.221-226,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-3
3.

国際会議録
国際会議録
3. A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
Brosselard, P. ; Bouchet, T. ; Planson, D. ; Scharnholz, S. ; Paques, G. ; Lazar, M. ; Raynaud, C. ; Chante, J. P. ; Spahn, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1005-1008,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
4.

国際会議録
国際会議録
4. Meta-stable dip (MSD) effect in fully-depleted SOI CMOSFETs
Bawedin, M. ; Yun, J.G. ; Cristoloveanu, S. ; Lee, H.D. ; Raynaud, C. ; Flandre, D.
出版情報: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.51-56,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-03
5.

国際会議録
国際会議録
5. Analysis of MOS device capacitance-voltage characteristics based on the self-consistent solution of the schrodinger and poisson equations
Raynaud, C. ; Autran, J. L. ; Masson, P. ; Bidaud, M. ; Poncet, A.
出版情報: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.159-,  2000.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 592
6.

国際会議録
国際会議録
6. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
Isoird, K. ; Lazar, M. ; Locatelli, M.-L. ; Raynaud, C. ; Planson, D. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1289-1292,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. Is SOI CMOS a promising technology for SOCs in high frequency range? Invited
Raynaud, C. ; Gianesello, F. ; Tinella, C. ; Flatresse, P. ; Gwoziecki, R. ; Touret, P. ; Avenier, G. ; Haendler, S. ; Gonnard, O. ; Gouget, G. ; Labourey, G. ; Pretet, J. ; Marin, M. ; Di Frenza, R. ; Axelrad, D. ; Delatte, P. ; Provins, G. ; Roux, J. ; Balossier, E. ; Vildeuil, J.C. ; Boret, S. ; Van Haaren, B. ; Chevalier, P. ; Boissonnet, L. ; Schwartzmann, T. ; Chantre, A. ; Gloria, D. ; De Foucauld, E. ; Scheer, P. ; Pavageau, C. ; Dambrine, G.
出版情報: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.331-344,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-03
9.

国際会議録
国際会議録
9. Realization of a High-Current and Low RON 600V Current-Limiting Device
Nallet, F. ; Godignon, P. ; Planson, D. ; Raynaud, C. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1247-1250,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
10.

国際会議録
国際会議録
10. P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
Lazar, M. ; Jacquier, C. ; Dubois, C. ; Raynaud, C. ; Ferro, G. ; Planson, D. ; Brosselard, P. ; Monteil, Y. ; Chante, J. P.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.633-636,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
11.

国際会議録
国際会議録
11. Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation
Isoird, K. ; Ottaviani, L. ; Locatelli, M. L. ; Planson, D. ; Raynaud, C. ; Bevilacqua, P. ; Chante, J. P.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1363-1366,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
12.

国際会議録
国際会議録
12. Architectures comparison for ultra-thin fully-depleted submicron SOI MOSFErs
Faynot, O. ; Giffard, B. ; Raynaud, C. ; Gautier, J.
出版情報: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.453-458,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-11
13.

国際会議録
国際会議録
13. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Lazar, M. ; Ottaviani, L. ; Locatelli, M.L. ; Raynaud, C. ; Planson, D. ; Morvan, E. ; Godignon, P. ; Skorupa, W. ; Chante, J.P.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.571-574,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
14.

国際会議録
国際会議録
14. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
15.

国際会議録
国際会議録
15. Fabrication and Characterisation of High-Voltage SiC-Thyristors
Zorngiebel, V. ; Scharnholz, S. ; Spahn, E. ; Brosselard, P. ; Arssi, N. ; Chante, J.-P. ; Planson, D. ; Raynaud, C. ; Spangenberg, B. ; Kurz, H.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.883-886,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
16.

国際会議録
国際会議録
16. Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Tournier, D. ; Godignon, Ph. ; Montserrat, J. ; Planson, D. ; Raynaud, C. ; Lazar, M. ; Chante, J.P. ; Sarrus, F. ; Bonhomme, C. ; de Palma, J.F.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.871-874,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
17.

国際会議録
国際会議録
17. Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination
Brezeanu, G. ; Godignon, P. ; Dimitrova, E. ; Raynaud, C. ; Planson, D. ; Mihaila, A. ; Udrea, F. ; Millan, J. ; Amaratunga, G. ; Boianceanu, C.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1495-1498,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
18.

国際会議録
国際会議録
18. OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
Wang, S.R. ; Raynaud, C. ; Planson, D. ; Lazar, M. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.863-866,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
19.

国際会議録
国際会議録
19. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Strel'chuk, A.M. ; Lebedev, A.A. ; Davydov, D.V. ; Savkina, N.S. ; Kuznetsov, A.N. ; Valakh, M.Ya. ; Kiselev, V.S. ; Romanyuk, B.N. ; Raynaud, C. ; Chante, J.P. ; Locatelli, M.L.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1133-1136,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
20.

国際会議録
国際会議録
20. Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension
Raynaud, C. ; Lazar, M. ; Planson, D. ; Chante, J.P. ; Sassi, Z.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1033-1036,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
21.

国際会議録
国際会議録
21. The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
Lazar, M. ; Cardinali, G. ; Raynaud, C. ; Poggi, A. ; Planson, D. ; Nipoti, R. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1025-1028,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
22.

国際会議録
国際会議録
22. Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
Brosselard, P. ; Zorngiebel, V. ; Planson, D. ; Scharnholz, S. ; Chante, J.P. ; Spahn, E. ; Raynaud, C. ; Lazar, M.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1129-1132,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
23.

国際会議録
国際会議録
23. Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
Isoird, K. ; Lazar, M. ; Locatelli, M.-L. ; Raynaud, C. ; Planson, D. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1289-1292,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
24.

国際会議録
国際会議録
24. SiC-Based Current Limiter Devices
Chante, J.P. ; Tournier, D. ; Planson, D. ; Raynaud, C. ; Lazar, M. ; Locatelli, M.L. ; Brosselard, P.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.951-956,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
25.

国際会議録
国際会議録
25. Realization of a High-Current and Low RON 600V Current-Limiting Device
Nallet, F. ; Godignon, P. ; Planson, D. ; Raynaud, C. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1247-1250,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
26.

国際会議録
国際会議録
26. Impact of down scaling on high-frequency noise performance of bulk and SOI MOSFETs (Invited Paper)
Dambrine, G. ; Raynaud, C. ; Vanmackelberg, M. ; Danneville, F. ; Pailloncy, G. ; Lepilliet, S. ; Raskin, J.P.
出版情報: Noise in Devices and Circuits.  pp.105-119,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5113