1.

国際会議録
国際会議録
1. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
Isoird, K. ; Lazar, M. ; Locatelli, M.-L. ; Raynaud, C. ; Planson, D. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1289-1292,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Realization of a High-Current and Low RON 600V Current-Limiting Device
Nallet, F. ; Godignon, P. ; Planson, D. ; Raynaud, C. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1247-1250,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Lazar, M. ; Ottaviani, L. ; Locatelli, M.L. ; Raynaud, C. ; Planson, D. ; Morvan, E. ; Godignon, P. ; Skorupa, W. ; Chante, J.P.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.571-574,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
5.

国際会議録
国際会議録
5. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Tournier, D. ; Godignon, Ph. ; Montserrat, J. ; Planson, D. ; Raynaud, C. ; Lazar, M. ; Chante, J.P. ; Sarrus, F. ; Bonhomme, C. ; de Palma, J.F.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.871-874,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
7.

国際会議録
国際会議録
7. OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
Wang, S.R. ; Raynaud, C. ; Planson, D. ; Lazar, M. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.863-866,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
8.

国際会議録
国際会議録
8. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Strel'chuk, A.M. ; Lebedev, A.A. ; Davydov, D.V. ; Savkina, N.S. ; Kuznetsov, A.N. ; Valakh, M.Ya. ; Kiselev, V.S. ; Romanyuk, B.N. ; Raynaud, C. ; Chante, J.P. ; Locatelli, M.L.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1133-1136,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
9.

国際会議録
国際会議録
9. Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension
Raynaud, C. ; Lazar, M. ; Planson, D. ; Chante, J.P. ; Sassi, Z.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1033-1036,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
10.

国際会議録
国際会議録
10. The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
Lazar, M. ; Cardinali, G. ; Raynaud, C. ; Poggi, A. ; Planson, D. ; Nipoti, R. ; Chante, J.P.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1025-1028,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460