1.

国際会議録
国際会議録
1. THE MECHANISM OF EPITAXIAL Si-Ge/Si HETEROSTRUCTURS FORMATION BY WET OXIDATION OF AMORPHOUS Si-Ge THIN FILMS
Prokes, S.M. ; Rai, A.K. ; Carlos, W.E.
出版情報: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.341-346,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 160
2.

国際会議録
国際会議録
2. INITIAL FORMATION OF SiGe/Si EPITAXIAL STRUCTURES AND OXIDES PRODUCED BY WET OXIDATION OF AMORPHOUS SiXGe1-XLAYERS
Prokes, S.M. ; Rai, A.K.
出版情報: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.639-644,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 202