1.

国際会議録
国際会議録
1. The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si
Hemer, S.B. ; Jones, K.S. ; Gossman, H.-J. ; Tung, R.T. ; Poate, J.M. ; Luftman, H.S.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.337-347,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4
2.

国際会議録
国際会議録
2. CHARACTERISTICS OF 56 MeV OXYGEN IMPLANTATION INTO Si AND III-V SEMICONDUCTORS
Pearton, S.J. ; Jalali, B. ; Poate, J.M. ; Fox, J.D. ; Kemper, K.W. ; Magee, C.W. ; Jones, K.S.
出版情報: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.271-276,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 201