1.

国際会議録
国際会議録
1. Diffusion of Si Self-Interstitials in the Presence of Carbon-Related Interstitial Traps
Gossman, H.-J. ; Stolk, P.A. ; Eaglehsam, D.J. ; Gilmer, G.H. ; Poate, J.M.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.64-74,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4
2.

国際会議録
国際会議録
2. The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si
Hemer, S.B. ; Jones, K.S. ; Gossman, H.-J. ; Tung, R.T. ; Poate, J.M. ; Luftman, H.S.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.337-347,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4