1.

国際会議録
国際会議録
1. Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy
Peaker,A.R. ; Dobaczewski,L. ; Andersen,O. ; Rubaldo,L. ; Hawkins,I.D. ; Nielsen,K.Bonde ; Evans-Freeman,J.H.
出版情報: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.549-560,  2000.  Pennington, N.J., Bellingham, Wash..  Electrochemical Society — SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4218
2.

国際会議録
国際会議録
2. Erbium-related defects in gallium arsenide.(Invited)
Peaker,A.R. ; Coppinger,F. ; Efeoglu,H. ; Evans-Freeman,J.H. ; Maude,D.K. ; Portal,J.-C. ; Rutter,P. ; Sionger,K.E. ; Scholes,A. ; Wright,A.C.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1551-1558,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263