1.

国際会議録
国際会議録
1. Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
A. Gallstrorm ; B. Magnusson ; P. Carlsson ; N.T. Son ; A. Henry ; F. Beyer ; M. Syvajarvi ; R. Yakimova ; E. Janzen
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.371-374,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
P. Carlsson ; N.T. Son ; T. Umeda ; J. Isoya ; E. Janzen
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.449-452,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
N.T. Son ; P. Carlsson ; B. Magnusson ; E. Janzen
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.465-468,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557