1.

国際会議録
国際会議録
1. Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
Kawasuso,A. ; Itoh,H. ; Cha,D. ; Okada,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.611-614,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Positron annihilatiou study of electron-irradiated silieon-germanium bulk alloys
Kawasuso,A. ; Okada,S. ; Yonenaga,I. ; Honda,T. ; Suezawa,M.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.127-132,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
3.

国際会議録
国際会議録
3. Vacancy-Hydrogen Interaction in Proton-Implanted Si Studied by Positron Lifetime and Infrared Absorption Measurements
Kawasuso,A. ; Arai,H. ; Okada,S.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.548-550,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257