1.

国際会議録
国際会議録
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Lendenmann, H. ; Dahlquist, F. ; Johansson, N. ; Soederholm, R. ; Nilsson, P.A. ; Bergman, J.P. ; Skytt, P.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.727-730,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
2.

国際会議録
国際会議録
2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
Bergman, J.P. ; Lendenmann, H. ; Nilsson, P.A. ; Lindefelt, U. ; Skytt, P.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.299-302,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356