Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation

Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation

著者名:

掲載資料名:

Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

386

発行年:

1995

開始ページ:

279

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992894 [1558992898]

言語:

英語

請求記号:

M23500/386

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020319
シリーズID:	PA00000011
会議名:	Symposium on ultraclean semiconductor processing technology and surface chemical cleaning and passivation
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.19

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