Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperature Less than 250°C

Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperature Less than 250°C

著者名:

掲載資料名:

Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

452

発行年:

1997

開始ページ:

989

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993563 [1558993568]

言語:

英語

請求記号:

M23500/452

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018911
シリーズID:	PA00000011
会議名:	Symposium on advances in microcrystalline and nanocrystalline semiconductors
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

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