1.

国際会議録
国際会議録
1. EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE
Yoshikawa, M. ; Morita, Y. ; Itoh, H. ; Nashiyama, I. ; Okumura, H. ; Misawa, S. ; Yoshida, S.
出版情報: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.797-802,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 281
2.

国際会議録
国際会議録
2. Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
Ohshima, T. ; Yoshikawa, M. ; Itoh, H. ; Kojima, K. ; Okada, S. ; Nashiyama, I.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1299-1302,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
3.

国際会議録
国際会議録
3. Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. ; Uedono, A. ; Itoh, H. ; Yoshikawa, M. ; Kojima, K. ; Okada, S. ; Nashiyama, I. ; Abe, K. ; Tanigawa, S. ; Frank, T. ; Pensl, G.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.857-860,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)