1.

国際会議録
国際会議録
1. Structural Characterization of 3C-SiC Films Grown on Si Layers Wafer Bonded to Polycrystalline SiC Substrates
Myers, R.L. ; Hobart, K.D. ; Twigg, M. ; Rao, S. ; Fatemi, M. ; Kub, F.J. ; Saddow, S.E.
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.145-148,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
2.

国際会議録
国際会議録
2. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
Myers, R.L. ; Saddow, S.E. ; Rao, S. ; Hobart, K.D. ; Fatemi, M. ; Kub, F.J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1511-1514,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460