Electrical Modeling and Simulation of Nanoscale MOS Devices With a High-Permittivity Dielectric Gate Stack
- 著者名:
Autran, J.L. Munteanu, D. Houssa, M. Bescond, M. Garros, X. Leroux, C. - 掲載資料名:
- Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 811
- 発行年:
- 2004
- 開始ページ:
- 177
- 終了ページ:
- 188
- 総ページ数:
- 12
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997615 [155899761X]
- 言語:
- 英語
- 請求記号:
- M23500/811
- 資料種別:
- 国際会議録
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12
国際会議録
Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications
Materials Research Society |