Potential Fluctuations in High-k Based Dielectric MOS Devices

Potential Fluctuations in High-k Based Dielectric MOS Devices

著者名:

Autran, J.-L. ( (L2MP - UMR CNRS 6137) )
Munteanu, D. ( (L2MP - UMR CNRS 6137) )
Houssa, M. ( (L2MP - UMR CNRS 6137) )

掲載資料名:

Dielectrics in emerging technologies : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-1

発行年:

2003

開始ページ:

383

終了ページ:

392

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773461 [1566773466]

言語:

英語

請求記号:

E23400/200301

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014064
シリーズID:	PA00000028
会議名:	International Symposium on Science and Technology of Dielectrics in Emerging Fields
回次:	1st
会議開催地:	Paris, France
会議開催年:	2003.04.27-2003.05.02

類似資料:

1 国際会議録 Electrical Modeling and Simulation of Nanoscale MOS Devices With a High-Permittivity Dielectric Gate Stack Autran, J.L., Munteanu, D., Houssa, M., Bescond, M., Garros, X., Leroux, C. Materials Research Society	7 国際会議録 A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric Vanheusden, K., Warren, W. L., Fleetwood, D. M., Devine, R. A. B., Draper, B. L., Schwank, J. R., Shaneyfelt, M. R., … MRS - Materials Research Society
2 国際会議録 Defect Generation in High-K Dielectric Stacks: Characterization and Modelling M. Houssa, J. L. Autran, V. V. Afanas'ev, A. Stesmans, M. M. Heyns Electrochemical Society	8 国際会議録 Current Challenges in Ge MOS Technology A. Dimoulas, M. Houssa, A. Ritenour, J. Fompeyrine, W. Tsai, J. Seo, Y. Panayiotatos, P. Tsipas, D. P. Brunco, M. R. … Electrochemical Society
3 国際会議録 Analysis of MOS device capacitance-voltage characteristics based on the self-consistent solution of the schrodinger and poisson equations Raynaud, C., Autran, J. L., Masson, P., Bidaud, M., Poncet, A. MRS-Materials Research Society	9 国際会議録 ELECTRICAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH HIGH PERMITTIVITY GATE DIELECTRIC LAYERS HOUSSA, M., MERTENS, P.W., HEYNS, M.M., STESMANS, A. Kluwer Academic Publishers
4 国際会議録 *Challenges in interface trap characterization of deep sub-micron MOS devices using charge pumping techniques Autran, J. L., Masson, P., Ghibaudo, G. MRS-Materials Research Society	10 国際会議録 Elimination of Native Ge Dielectrics at Ge/High-k Dielectric Interfaces for Ge MOS Devices G. Lucovsky, J.P. Long, H. Seo, K. Chung, S. Lee Electrochemical Society
5 国際会議録 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	11 国際会議録 Chemical dry cleaning and pretreatment on the electrical and reliability characteristic of high-k gate dielectrics in MOS device (Invited Paper) Cheng, C.-L., Wang, T.-K., Chang-Liao, K.-S. SPIE-The International Society for Optical Engineering
6 国際会議録 Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices K.-S. Chang-Liao, P.-J. Tzeng Electrochemical Society	12 国際会議録 STUDY OF THE EFFECT OF SILICON SURFCE TREATMENT ON EOT IN HIGH-k DIELECTRIC MOS GATE STACK Chang, K., Shanmugasundaram, K., Lee, D.-O., Roman, P., Shallenberger, J., Chang, F.-M., Wang, J., Beck, R., Mumbauer, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12