1.

国際会議録
国際会議録
1. Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
La Via, F. ; Roccaforte, F. ; Di Franco, S. ; Raineri, V. ; Moscatelli, F. ; Scorzoni, A. ; Cardinali, G.C.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.827-830,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
2.

国際会議録
国際会議録
2. Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
Scorzoni, A. ; Moscatelli, F. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.881-884,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
3.

国際会議録
国際会議録
3. Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.993-996,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
4.

国際会議録
国際会議録
4. SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature
Poggi, A. ; Nipoti, R. ; Moscatelli, F. ; Cardinali, G.C. ; Canino, M.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.945-950,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
5.

国際会議録
国際会議録
5. Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes
Poggi, A. ; Nipoti, R. ; Cardinali, G.C. ; Moscatelli, F.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.621-624,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
6.

国際会議録
国際会議録
6. Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.673-676,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436