Hydride vapor phase epitaxy of gallium nitride films for quasi-bulk substrates

Hydride vapor phase epitaxy of gallium nitride films for quasi-bulk substrates

著者名:

掲載資料名:

Proceedings of the First Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-11

発行年:

1996

開始ページ:

212

終了ページ:

234

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771634 [1566771633]

言語:

英語

請求記号:

E23400/962353

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013844
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	1st
会議開催地:	Los Angeles, CA. USA
会議開催年:	1996.05.06-1996.05.08

類似資料:

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2 国際会議録 Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy Molnar, R. J., Aggarwal, R., Liau, Z-L., Brown, E. R., Melngailis, I., Gotz, W., Romano, L. T., Johnson, N. M. MRS - Materials Research Society	8 国際会議録 The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium Nitride Molnar, R. J., Nichols, K. B., Maki, B., Brown, E. R., Melngailis, I. MRS - Materials Research Society
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4 国際会議録 Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., Kuech, T. F. MRS - Materials Research Society	10 国際会議録 Reaction-Transport Models of the Metalorganic Vapor Phase Epitaxy of Gallium Nitride Puwlosvski, R.P., Theodoropoulos, C., Salinger, A.G., Moffat, H.K., Mountziuris, T.J., Shadid, J.N., Thrush, E.J. Electrochemical Society
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