A COMPARATIVE STUDY OF GaN FILMS GROWN ON DIFFERENT FACES OF SAPPHIRE BY ECR-ASSISTED MBE

A COMPARATIVE STUDY OF GaN FILMS GROWN ON DIFFERENT FACES OF SAPPHIRE BY ECR-ASSISTED MBE

著者名:

掲載資料名:

Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

242

発行年:

1992

開始ページ:

427

終了ページ:

432

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991361 [1558991360]

言語:

英語

請求記号:

M23500/242

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015726
シリーズID:	PA00000011
会議名:	Symposium on wide band gap semiconductors
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.06

類似資料:

1 国際会議録 HIGH MOBILITY GaN FILMS PRODUCED BY ECR-ASSISTED MBE Molnar, R.J., Lei, T., Moustakas, T.D. Materials Research Society	7 国際会議録 A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates Sampath, A. V., Misra, M., Seth, K., Fedyunin, Y., Ng. H. M., Iliopoulos, E., Feit, Z., Moustakas, T. D. MRS-Materials Research Society
2 国際会議録 *GROWTH AND DOPING OF GaN FILMS BY ECR-ASSISTED MBE Moustakas, T.D., Molnar, R.J. Materials Research Society	8 国際会議録 Photoconducting Properties of Ultraviolet Detectors Based on GaN and Al1-xGaxN Films Grown by ECR-MBE Misra, M., Korakakis, D., Singh, R., Sampath, A., Moustakas, T. D. MRS - Materials Research Society
3 国際会議録 Growth of Polycrystalline scandium nitride by ECR-MBE Moustakas, T.D., Molnar, R.J., Dismukes, J.P. Electrochemical Society	9 国際会議録 GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN/sapphire substrates Sampath,A.V., Iliopoulos,E., Seth,K., Fedyunin,Y., Misra,M., Ng,H.M., Lamarre,P., Feit,Z., Moustakas,T.D. SPIE - The International Society for Optical Engineering
4 国際会議録 Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE Moustakas, T. D. MRS - Materials Research Society	10 国際会議録 Doping Studies of n- and p-Type AlxGa1-xN Grown by ECR-Assisted MBE Korakakis, D., Ng, H. M., Ludwig, K., Moustakas, T. D. MRS - Materials Research Society
5 国際会議録 A COMPARATIVE STUDY OF GaN EPITAXY ON Si(001) AND Si(111) SUBSTRATES Lei, T., Moustakas, T.D. Materials Research Society	11 国際会議録 Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially by MBE on GaN Templates Garrett, G.A., Sampath, A.V., Collins, C.J., Semendy, F., Aliberti, K., Shen, H., Wraback, M., Fedyunin, Y., Moustakas, … Materials Research Society
6 国際会議録 GROWTH OF TETRAHEDRAL PHASES OF BORON NITRIDE THIN FILMS BY REACTIVE SPUTTERING Moustakas, T.D., Lei, T., Molnar, R.J., Fountzoulas, C., Oles, E.J. Materials Research Society	12 国際会議録 Growth of InGaN Films by MBE at the Growth Temperature of GaN Singh, R., Moustakas, T. D. MRS - Materials Research Society

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