1.

国際会議録
国際会議録
1. LOW TEMPERATURE PL CHARACTERIZATION OF LPEE GROWN GaSb AND GaInAsSb EPILAYERS
Iyer, S. ; Hegde, S. ; Bajaj, K.K. ; Abul-Fadl, Ali ; Mitchel, W.
出版情報: Infrared detectors : materials, processing, and devices : symposium held April 14-16, 1993, San Francisco, California, U.S.A..  pp.41-46,  1994.  Pittsburgh, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 299
2.

国際会議録
国際会議録
2. InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al2O3 Substrates
Michel, E. ; Mohseni, H. ; Wojkowski, J. ; Sandven, J. ; Xu, J. ; Razeghi, M. ; Vu, P. ; Bredthauer, R. ; Mitchel, W. ; Ahoujja, M.
出版情報: Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.  pp.79-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 450
3.

国際会議録
国際会議録
3. MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures
Redwing, J. M. ; Flynn, J. S. ; Tischler, M. A. ; Mitchel, W. ; Saxler, A.
出版情報: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.201-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 395
4.

国際会議録
国際会議録
4. The Growth and Characterization of Large Diameter Silicon Carbide Substrates
Gupta, A. ; Yoganathan, M. ; Burton, J. ; Byrd, N. ; Dimondi, A. ; Edwards, S. ; Giordana, A. ; Glesener, J. ; Harding, J. ; Long, F. ; Mitchel, W. ; Saxler, A. ; Sostak, R. ; Whitlock, J. ; Thomas, R.N. ; Anderson, T.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640